Document Type masters report Author Name Lamontagne, Maurice URN etd-053007-105648 Title Development of a Statistical Model for NPN Bipolar Transistor Mismatch Degree MS Department Mathematical Sciences Advisors Jayson Wilbur, Advisor Keywords statistical model mismatch bipolar transistor Date of Presentation/Defense 2007-04-20 Availability unrestricted
Due to the high variation of critical device parameters inherent in integrated circuit manufacturing, modern integrated circuit designs have evolved to rely on the ratios of similar devices for their performance rather than on the absolute characteristics of any individual device. Today's high performance analog integrated circuits depend on the ability to make identical or matched devices. Circuits are designed using a tolerance based on the overall matching characteristics of their particular manufacturing process. Circuit designers also follow a general rule of thumb that larger devices offer better matching characteristics. This results in circuits that are over designed and circuit layouts that are generally larger than necessary. In this project we develop a model to predict the mismatch in a pair of NPN bipolar transistors. Precise prediction of device mismatch will result in more efficient circuit deigns, smaller circuit layouts and higher test yields, all of which lead to into more reliable and less expensive products.
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