Title page for ETD etd-053007-105648

Document Type	masters report
Author Name	Lamontagne, Maurice
URN	etd-053007-105648
Title	Development of a Statistical Model for NPN Bipolar Transistor Mismatch
Degree	MS
Department	Mathematical Sciences
Advisors	Jayson Wilbur, Advisor
Keywords	statistical model mismatch bipolar transistor
Date of Presentation/Defense	2007-04-20
Availability	restricted
Abstract Due to the high variation of critical device parameters inherent in integrated circuit manufacturing, modern integrated circuit designs have evolved to rely on the ratios of similar devices for their performance rather than on the absolute characteristics of any individual device. Today's high performance analog integrated circuits depend on the ability to make identical or matched devices. Circuits are designed using a tolerance based on the overall matching characteristics of their particular manufacturing process. Circuit designers also follow a general rule of thumb that larger devices offer better matching characteristics. This results in circuits that are over designed and circuit layouts that are generally larger than necessary. In this project we develop a model to predict the mismatch in a pair of NPN bipolar transistors. Precise prediction of device mismatch will result in more efficient circuit deigns, smaller circuit layouts and higher test yields, all of which lead to into more reliable and less expensive products.
Files	MS_PROJECT_REPORT_MLamontagne.pdf indicates that a file or directory is accessible from the WPI campus network only.

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